- Sample observation in high-vacuum , low-vacuum(130Pa) and ESEM(4000Pa)
- Surface morphology observation and element composition analysis
- High speed point/line/surface scanning and EDS mapping
- 284mm sample chamber and suitable for observation of 4 inch silicon wafer
- CL system for imaging and spectroscopy and more information about band gap and impurities
- EBIC system for more information about material structures and impurities
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