Experience：
1992.09 ~ 1995. 07 M.S. material science
Department of Material Sciences and Engineering, Xi'an Jiaotong University, Xi’an, P. R. China
1995.09 ~ 1998.07 Ph.D. materials science
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P. R. China
1998.08~1999.10 Research assistant, Associate professor
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS)
1999.11~2002.11 Postdoctoral researcher
Chiba University Venture Business Laboratory
2002.12~2003.12 Researcher
iCREST-JST program of “New evolution of MBE technology for InN based group
III-nitrides nano-technologies/devices”
2004.01~2006.09 Associate professor
Research Center for Wide Gap Semiconductor , School of physics, Peking university
2006.10~present Director of Platform for Characterization & Test, SINANO
Major Scientific Contribution:
Initial work on growth of LiAlO2 for substrate application and epitaxial growth of non-polar GaN on the LiAlO2
Research on Polarity selection process and polarity manipulation of nitride in MOCVD and MBE and Polarity Conversion Model is constructed.
The effects of polarity on InN growth is discovered for the first time and high-quality InN films can be abtained
When coming back to China , he joins in the research of GaN-based Laser Diode, optimizes the device construction and makes electron injection and pulse excition of 405nm Laser Diode come true.
One International patent, 50 pieces of pubilicated paper,13 times of invited talks in the international conference
Tel：0512-62872501
