平台2008年至今的文章，分别介绍了各个研究成果中采用我们测试分析平台的各类测试分析技术
2012年
1. Title: Self-adaptive electronic contact between grapheme and semiconductors.
Author: Zhong HJ; Liu ZH; Xu GZ; Fan YM; Wang JF; Zhang XM; Liu LW; Xu K (通信作者), et al., APPLIED PHYSICS LETTERS DOI: 1.3696 671 Published: 2012
--> 该研究成果中使用了测试分析平台的原子力显微镜中图像扫描及原子力显微镜中电学测量技术
2. Title: The bound states of Fe impurity in wurtzite GaN.
Author: Zhang M; Zhou TF; Xu K (通信作者), et al., Source: APPLIED PHYSICS LETTERS, Volume: 100, Pages:041904 Published: 2012
--> 该研究成果中使用了高质量的铁掺杂氮化镓样品，利用了测试分析平台的PL等光电测试技术
3. Title: Spin-dependent tunneling spectroscopy in MgO-based double-barrier magnetic tunnel junctions
Author(s): Yu GQ; Kurt H; Feng JF; Xu K; Coey JMD; Han XF
Source: JOURNAL OF APPLIED PHYSICS Volume: 111 Pages: 07C712 Published: 2012
--> 该研究成果为测试分析平台与北京物理所联合培养学生的工作
2011年
4. Title: Dislocation cross-slip in GaN single crystals under nanoindentation.
Author: Huang J; Xu K (通信作者); Gong X J; Wang J F; Fan Y M; Liu J Q; Zeng X H; Ren GQ; Zhou TF; Yang H
Source: APPLIED PHYSICS LETTERS, Volume: 98, Pages:221906
Published: 2011
--> 该研究成果使用了高质量的氮化镓晶片，利用测试分析平台的纳米压痕技术及CL，SEM，TEM等测试分析技术
5. Title: Comprehensive thermal characterization using ruby Rfluorescence lines of sapphire and GaNE2-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs
Author(s): Cui M , Zhou T F, Xu K (通信作者), et al.,
Source: J. Phys. D: Appl. Phys. Volume: 44 Page: 355101 Published: 2011
--> 该研究成果利用了测试分析平台光电测试手段
6. Title: Structure, stress state and piezoelectric property of GaN nanopyramid arrays
Author(s): Liu JQ; Wang JF; Gong XJ; Huang J; Xu K (通信作者); Zhou TF; Zhong HJ; Qiu YX; Cai DM; Ren GQ; Yang H,
Source:Applied Physics Express, Volume: 4, Page: 045001 Published: 2011
--> 该研究成果利用了测试分析平台光电设备进行光化学腐蚀，利用SEM，CL，AFM等测试手段获得纳米线形貌，光电流等性质
7. Title: A practicle route towards fabricating GaN Nanowire arrays.
Author(s): Liu JQ, Huang J, Gong XJ, Wang JF, Xu K (通信作者) et al. Source: Crystengcomm, Volume:13, Pages:5929-5935 Published:2011
8. Title: Analysis of Modified Williamson-Hall Plots on GaN Layers Author(s): Liu JQ; Qiu Y X; Wang J F; Xu K (通信作者); Yang H
Source: CHIN. PHYS. LETT. Volume: 28, Pages: 016101 Published: 2011
--> 利用XRD分析手段分析氮化镓薄膜的性质
9. Title: Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions.
Author(s): Gong XJ; Zhang JP; Xu K (通信作者); Wang ZG; Yang, H; Yu R; Zhan W
Source: Adv. Mater. Res. Volume: 268, Pages: 950-954, Published: 2011
10. Title: Growth behavior of GaN film along non-polar [1 1 –2 0] directions.
Author(s): Gong XJ; Xu K (通信作者);et al.
Source: Physica B Volume: 406, Pages: 36-39, Published: 2011
--> 利用模拟计算方法研究氮化物生长动力学
2010年
11. Title: A Controllable Molecular Sieve for Na+ and K+ Ions.
Author(s): Gong XJ; Li JC; Xu K; Wang JF; Yang H
Source: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY Volume: 132 Pages: 1873-1877 Published: 2010
12. Title: Growth Mechanism of Large-Size Rubrene Single Crystals Grown by a Solution Technique.
Author(s): Zhang PQ; Zeng XH; Deng JC; Huang K; Bao F, Qiu YX, Xu K, and Jinping ZHANG, Source: Japannese Journal of Applied physics Volume: 49, Pages: 095501, Published:2010
13. Title: Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells, Enhancement and Suppression of Photoluminescence Intensity.
Author(s): Huang ZL; Wang JF; Liu ZH; Xu K; Yang H; Cao B; Han Q; Zhang GJ; Wang CH
Source: Applied Physics Express, Volume: 3, Pages: 072001, Published: 2010
14. Title: Polarized GaN-based LED with an integrated multi-layer subwavelength structure
Author(s): Zhang GJ; Wang CH; Cao B; Huang ZL; Wang JF; Zhang BS; Xu K
Source: Opt Express, Volume:18, Pages: 7019-7030, Published: 2010
2009年
15. Title: Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys
Source: JOURNAL OF APPLIED PHYSICS Volume: 106 Issue:11 Article Number: 113511 Published: 2009
16. Growth mechanism of large-size anthracene single crystals grown by a solution technique
Source: JOURNAL OF CRYSTAL GROWTH Volume:311 Issue:23-24 Article Number:4708 Published: 2009
Author(s): Liu JQ; Wang JF; Qiu YX; Guo X; Huang K; Zhang YM; Hu XJ; Xu Y; Xu K (通信作者); Huang XH; Yang H
Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 24 Article Number: 125007 Published: 2009
19. Title: High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers Author(s): Liu JQ; Wang JF; Liu YF; Huang K; Hu XJ; Zhang YM; Xu Y; Xu K (通信作者); Yang H Conference Information: 2nd International Symposium on Growth of III Nitrides (ISGN-2), Date: JUL 07-09, 2008 Laforet Shuzenji JAPAN Source: JOURNAL OF CRYSTAL GROWTH Volume: 311 Issue: 10 Pages: 3080-3084 Published: 2009
20. Title: High-resolution X-ray diffraction studies of highly curved GaN layers prepared by hydride vapor phase epitaxy
Author(s): Liu JQ; Qiu YX; Wang JF; Guo X; Huang K; Xu K (通信作者); Yang H
Conference Information: Photonics and Optoelectronics Meeting 2009, Wuhan China
21. Title: 晶体翘曲对HVPE厚膜GaN三轴晶X射线摇摆曲线的影响
Author(s): 刘建奇; 王建峰; 邱永鑫; 黄凯; 张育民; 胡晓剑; 徐俞; 徐科(通信作者); 杨辉
Source: 材料科学与工程学报 Volume: 26 Pages: 51 Published: 2009
|
